ABB 5SHX2645L0002/3HB012961R0001
Product Description
The ABB 5SHX2645L0002/3HB012961R0001 is a high – performance power semiconductor module designed for demanding industrial applications1. It features a hybrid design that combines the advantages of insulated – gate bipolar transistors (IGBTs) and integrated gate – commutated thyristors (IGCTs)2. This results in a module that offers high switching speeds, low conduction losses, and high current – handling capability2. It is suitable for high – power switching in industrial drives and power distribution systems, such as in metal processing, mining, material handling, renewable energy, and transportation applications1.
Product Parameters
- Voltage Rating: 4500 V
- Current Rating: 1800 A (maximum average on – state current)
- Maximum Surge Current: 6.5 kA
- Gate Trigger Voltage: 20 V
- Gate Trigger Current: 1.5 A
- Peak On – State Voltage: 3.0 V
- Critical Rate of Rise of Off – State Voltage (dv/dt): 2000 V/μs
Product Specifications
- Mechanical Specifications:
- Weight: 2.8 kg
- Dimensions: 91 mm frame diameter
- Mounting: Suitable for installation in high – power converter cabinets or panels, utilizing standard mounting techniques for secure placement
- Connection Type: High – quality screw terminals for reliable connections
- Environmental Specifications:
- Operating Temperature: – 40 °C to + 125 °C
- Storage Temperature: – 55 °C to + 150 °C
- Cooling Requirement: Forced air or liquid cooling recommended for optimal performance
- Relative Humidity: 5% to 95%, non – condensing
- Altitude: Suitable for operation up to 3000 m
