A-B 81001-450-53-R Insulated gate bipolar transistor

LAM 719-101612-887 LAM 08340205 LAM 09100039 LAM 810-006490-006 LAM 810-028296-173 LAM 810-028296-174 LAM 810-047858-101 LAM 810-072687-119 LAM 810-072687-120 LAM 810-072687-444 LAM 810-072907-005 LAM 810-072907-005 LAM 810-073479-003 LAM 810-082745-003 LAM 810-099175-103 LAM 810-102361R216 LAM 810-141735-006 LAM 810-209684-004

A-B 81001-450-53-R

The A-B 81001-450-53-R module is an IGBT (insulated gate bipolar transistor) three-piece module manufactured by Mitsubishi and commonly used in high-power power electronics applications. It is sold and distributed by Rockwell Automation (A-B).

Product name and model
Product name: Silicon controlled Rectifier module (SCR) /IGBT three sets
Model: 81001-450-53-R


Product description
This module is mainly used in applications requiring high current, high voltage and fast switching, such as:

Industrial drive: inverter, servo drive
Electric traction: electric locomotives, electric cars
New energy generation: photovoltaic inverter, wind turbine
Power electronic equipment: UPS, welding equipment
Product parameters and specifications
Since the specific parameters may vary slightly depending on the manufacturing batch and application scenario, the following are the general specifications:

Type: IGBT three-piece set
Rated current: High
Rated voltage: High
Switching speed: Fast
Package form: Usually adopts flat leadless (Press-Pack) package
Cooling method: forced air cooling or liquid cooling

Reviews

Reviews

There are no reviews yet.

Be the first to review “A-B 81001-450-53-R Insulated gate bipolar transistor”

Your email address will not be published. Required fields are marked *

Post comment