ABB 3BHE023784R0001 IGCT (insulated gate bipolar transistor) module

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ABB 3BHE023784R0001

ABB 3BHE023784R0001 is a high voltage IGCT (insulated gate bipolar transistor) module for power electronics applications. IGCT is a kind of power semiconductor device, which has the characteristics of fast switching speed, high current and high voltage tolerance, etc. It is widely used in the fields of motor drive, power transformer, static reactive power compensation device, etc.

Product name and description


Product name: ABB IGCT module
Model: 3BHE023784R0001
Description: This module is a high voltage IGCT module for power conversion and control in power electronics systems. It has the characteristics of high reliability, high efficiency and long life.
Main parameters and specifications
Voltage level: 4500V
Current level: The specific current level needs to be determined according to the specific application and heat

dissipation conditions
Package form: Usually adopts flat package for easy installation and heat dissipation
Operating temperature range: -40℃ to +125℃

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