ABB 5SHY3545L0009 IGCT (insulated gate bipolar transistor) module

ABB 5SHY3545L0009LAM 810-072907-005 LAM 810-073479-003 LAM 810-082745-003 LAM 810-099175-103 LAM 810-102361R216 LAM 810-141735-006 LAM 810-209684-004 LAM 810-253279-102 LAM 810-267520-003 LAM 810-267520-003 LAM 810-311264-003 LAM 810-316271-503 LAM 810-327754-003 LAM 810-327754-003 LAM 810-335630-402 LAM 810-800081-016 LAM 810-800082-021 LAM 810-800082-029 LAM 810-800082-201 LAM 810-800082-243

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ABB 5SHY3545L0009

The ABB 5SHY3545L0009 is a high-performance IGCT (insulated gate bipolar transistor) module designed for use in high-power power electronics systems. IGCT is a kind of power semiconductor device with high input impedance of MOSFET and low on-voltage drop of GTO. It has the characteristics of fast switching, high current and high withstand voltage. The module is usually used in the need of high power, high reliability occasions, such as power inverter, static reactive power compensation device, etc.

Main feature

High power: Capable of handling large currents, suitable for high power applications.
Fast switching: Fast switching speed, improve the dynamic response of the system.
High voltage: can withstand high pressure, suitable for harsh electrical environment.
Low on-voltage drop: reduces power loss and improves system efficiency.
High reliability: Advanced packaging technology is used to ensure the reliability of the module.
Product parameters (typical values, please refer to the product data manual for specific parameters)
Rated voltage: 4500V
Rated current: thousands of amps (depending on model)
Switching speed: microsecond