ABB 5SHY3545L0014 3BHE019719R0101 IGBT (insulated gate bipolar transistor) module

ABB 5SHY3545L0014 3BHE019719R0101 Today's recommended products: NVIDIA H100 PCIE NVIDIA H800 PCIE LAM 839-101612-885 LAM 839-101612-887 LAM 719-101612-885 LAM 719-101612-887 Many in stock, first come first served, first-hand source, channel Contact: Han Fangting Sales Manager Mobile :18030042035 QQ: 748141623 Email: 748141623@qq.com Web site :www.changxindcs.com www.changxinsz.com We operate ABB, GE aereration, A-B, Honeywell, KUKA, SCHNEIDER, Bentley, TRICONEX Invensys, WOODWARD, FOXBORO, WESTINGHOUSE, and MOTOROLA MOTOROLA, KEBA, KOLLMORGEN, EMERSON, HIMA dark horse, industrial and commercial energy storage, container energy storage, household light energy storage, (peak cutting, valley filling, backup power supply) can be contacted if necessary. Country of Origin: USA Moq :1 piece Packaging: new raw materials and individual packaging Delivery time :2-3 working days Payment method: Bank transfer, Western Union

ABB 5SHY3545L0014 3BHE019719R0101

The ABB 5SHY3545L0014 3BHE019719R0101 module is a high-performance IGBT (insulated gate bipolar transistor) module produced by ABB, which is mainly used in the field of power electronics. IGBT is a kind of high-power semiconductor device, which has the advantages of fast switching speed, low on-voltage, high temperature resistance, etc. It is widely used in power inverter, static reactive power compensation device, DC transmission and so on.

5SHY3545L0014: Indicates the model of the IGBT chip, with higher current and voltage ratings.
3BHE019719R0101: May be the specific model number, batch number, or other internal identification of the module for tracking and management.
Product Name:


ABB 5SHY3545L0014 3BHE019719R0101 IGCT module
Product description
This module is usually integrated in ABB’s power electronics as a power switching device to enable fast switching of large currents. It is capable of operating at high frequencies, has a low on-voltage drop and fast switching speed, and is suitable for power electronics applications requiring high power and high efficiency.

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