TOSHIBA 2N3A3120
Product name: TOSHIBA 2N3A3120 module, also known as PNP type silicon single junction field effect transistor, is a PNP type silicon single junction field effect transistor produced by Toshiba Corporation. The module is mainly used to amplify or switch electronic signals, and can be used in various electronic devices and circuits.
Product features:
High current: Rated current up to 3A.
High voltage: The rated breakdown voltage can reach 30V.
Low noise: Low noise, suitable for audio amplification applications.
High reliability: Made of high quality materials and durable.
Product parameters:
Parameter value unit
Model 2N3A3120
Type PNP silicon single junction field effect transistor
Rated current 3A
Rated breakdown voltage 30V
Maximum grid drain current 100nA
Grid-source threshold voltage 2V to 4V
Maximum power dissipation 1.5W
Operating temperature -55°C to 150°C
Storage temperature -65°C to 175°C
Package TO-92
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